ICPST and TAPJ are plannnig to provide opertunity to learn advanced materials processes for semiconductor manufacturing. 

This tutorial session is a joint event of The Society of Photopolymer Sciene and Technology (フォトポリマー学会) and  The Technical Association of Photopolymers, Japan （フォトポリマー懇話会) 

 Tuesday, June 24, 2025 at Medium Hall (693 seats) at Arcrea Himeji

TUTORIAL Session ORGANIZERS 

SEIJI NAGAHARA (ASML Japan), HARUYUKI OKAMURA (Osaka Metropolitan University)

Purpose of TUTORIAL SESSION

For the semiconductor industry’s scientists and engineers, this program provides an opportunity to learn the fundamentals of lithography materials science and technology.

半導体業界の人材育成の一環として、リソグラフィー材料に関する科学と技術の基礎を学ぶ機会を提供する

Target AUDIENCE of TUTORIAL 

University students who are considering related company for a future job
Lithographers/process engineers /material engineers in semiconductor companies, materials/equipment suppliers
Scientists who work for the related science and technology 

Resistration

The attendees of ICPST and members of TAPJ can join this tutorial session with free of charge. Tutorial materials will be shared with the attendees from web site if speakers' permission is obtained. 

LANGUAGE of the TUTORIAL SESSIOn

The tutorial will be given by English or Japanese. The language in the slides will be English.

Tutorial speaker: Hideo Horibe (Osaka Metropolitan University)

Biography: Prof. Hideo Horibe is a professor of Tohoku University and Department of Applied Chemistry and Bioengineering, Graduate School of Engineering, Osaka Metropolitan University. He graduated from the Department of Synthetic Chemistry, Faculty of Engineering, Kyoto University and took Ph.D. in Engineering at Osaka University. His group at Osaka Metropolitan University are developing high performance of organic materials and polymer materials with new functionality that cannot be achieved by conventional method. He is serving as President of The Technical Association of Photopolymers, Japan.

Presentation title:  History of the Semiconductor Industry and Development of Chemical Amplification Three-Component Resists (半導体産業の歴史と化学増幅系3成分レジストの開発)

Abstract: 半導体を日本政府が経済安全物資と位置づけ4兆円を投与しており、日本の半導体産業が復活する最後の機会である。私自身、半導体デバイスの製造や開発に長年携わり、その中でもリソグラフィー工程に用いるフォトレジストを研究してきた。本講演では、半導体産業の変遷について語るとともに、現在研究室で開発している化学増幅系3成分 (ノボラック樹脂、溶解抑制剤、酸発生剤) i線用ポジ型レジストについて解説する。

Tutorial speaker: John S. Petersen (imec and University of Maryland, College Park)

Biography: Prof. John Petersen is the Angstrom Patterning Scientific Director of Lithography and co-founder of the AttoLab at imec, focusing on EUV resist fundamentals, lensless imaging, and super-resolution lithography. He is an Adjunct Professor at the University of Maryland, and a SPIE and SEMATECH Fellow. Since 1980, he has contributed to photoresist lithography, with 20 invited talks, 12 patents, and 90+ papers. His career includes roles at Texas Instruments, Shipley Company, and SEMATECH. At TI, he introduced lithography steppers, puddle development, and TI-built inline hot plates into production. At Shipley, he supported resists for 436, 365, 248, 193 nm, and electron beam lithography. He founded Petersen Advanced Lithography and Periodic Structures, and he has served on the boards of tau-Metrix, Gauda, and Pixelligent.

Title: From Visible to Extreme UV: The Evolution of Information Transfer in Semiconductor Projection Lithography

Abstract: Since the 1970s, projection printing has enabled the transfer of diffraction information from photomasks to wafers, achieving the feature sizes necessary for continued semiconductor industry profitability. This tutorial explores the evolution of projection lithography, wavefront engineering, and resist chemistry essential for printing micro- and nano-circuitry. We will cover shrinking wavelengths, increasing numerical aperture, changing source shapes, mask technologies, and design strategies for device manufacture, highlighting how resist makers have optimized image information transfer. Then we will speculate the future.

Tutorial speaker: Makoto Hanabata (Photofunctional Materials Research Co., Ltd.)

Biography: Dr. Makoto Hanabata received his Ph.D. in Technology in 1993 and M.S. in Applied Chemistry, Osaka University, Japan in 1976 from Osaka University. With over 40 years of experience, he has led R&D and business development in photo-functional materials for electronics, including photoresists, hybrid materials, and polymers. He held key roles at Sumitomo Chemical, KRI International, and Nissan Chemical, contributing to innovations in lithography and photoresists and photo-functional materials. Currently, he is President of Photofunctional Materials Research Co., Ltd., and serves as a visiting professor at multiple universities in Japan. Dr. Hanabata is renowned for his expertise in synthesis, material design, and process optimization for semiconductor and display applications.

Presentation title:  i-line resist: History and Design Principle

Abstract: I-line lithography has started to be used for mass production of IC devices from around 1985.Before then people believed that EB and/or X-ray lithography are the next of g-line lithography.   In the beginning, it seems easy to replace PAC for g-line to PAC for i-line.  However, to make high performance i-line resists, it was necessary to design a new resin and other components. In this tutorial, a history of g-line resist to i-line resist is discussed together with a design principle of i-line resist including novolak resin and PAC to achieve higher contrast of resist materials. It should be noted that a lot of resolution enhancement technologies are contributed to make shrinkage of pattern size until now.

Tutorial speaker: Toru Fujimori (Hitachi High-Tech)

Biography: Mr. Toru Fujimori is a Senior Engineer (Advanced Resist Metrology Solution) at Hitachi High-Tech Corporation. Prior to join Hitachi High-Tech Corporation, he has just retired from FUJIFILM Corporation in 2025. He joined FUJIFILM Corporation in 1991, to develop novel materials for photographic films, and photoresists. He’s started to study color resist for image sensor since 2002, then, he has studied photo resist materials for KrF, ArF, ArF immersion, EB and EUV lithography. From 2014 to 2016, he was senior researcher at EIDEC (EUVL Infrastructure Development Center). He has filed over 200 patents, described lots of papers, presentations and text books.

Presentation title:  KrF/ArF/ArFi/EB/EUV Chemically Amplified Resist (CAR); (PTD, NTD, developer)

Abstract: Chemically Amplified Resist (CAR) was developed in 1983 for KrF (248nm) lithography generation. CAR systems have been consistently selected for the advanced lithography technologies, including KrF, ArF, ArFi, EB and EUV lithography, due to the need to increase resist sensitivity while maintaining high resolution. Conversely, Negative-Tone Development (NTD) emerged to facilitate the production of small feature sizes for multiple patterning techniques. This tutorial paper will describe the history and technical review of CAR materials and processes. 

Tutorial speaker: Tomotaka Tsuchimura (FUJIFILM Corporation)

Biography: Dr. Tomotaka Tsuchimura is a Research Manager of Synthetic Organic Chemistry Laboratories at FUJIFILM Corporation. He received M.S. degree in Synthetic Organic Chemistry from Tokyo Institute of Technology in 2000 under the supervision of Prof. Takeshi Nakai and Prof. Katsuhiko Tomooka. In addition, he received Ph. D. in Synthetic Organic Chemistry from Nara Institute of Science and Technology (NAIST) in 2019 under the supervision of Prof. Kiyomi Kakiuchi. Since he joined FUJIFILM in 2000 and has developed photopolymer materials for graphic printing plates (CTP), UV inks, color filters (LCD, image sensor) and photoresists (KrF, ArF, EB, EUV, NIL lithography). He has applied over 250 patents in these fields. He has received the Photopolymer Science and Technology Award, the Best Paper Award 2008 and 2021. His research interests are the development of new photopolymer materials and their applications.

Presentation title:  Basics and Recent Advances of Photo-Acid Generators

Abstract: Photo-acid generators (PAGs) are one of the key materials that can affect the properties of photopolymer materials. There is a growing need for PAGs with more sophisticated and diverse functions to adapt to the increasing variety of exposure light sources and novel applications, such as extreme ultraviolet (EUV) lithography. This tutorial focuses on the basics and newly proposed advanced designs of PAGs.

Tutorial speaker: Robert L. Brainard (University at Albany)

Biography: Prof. Robert Brainard received his B.S. in Chemistry from U.C. Berkeley and a Ph.D. in Chemistry while working with Professor G. Whitesides at MIT and Harvard University.  Following his post-doctoral studies with Professor R. Madix at Stanford University, he worked for Polaroid and Shipley/RHEM in the areas of: DUV, EUV and E-Beam Photoresists.  Prof. Brainard is now a Professor at University at Albany studying: EUV photoresist exposure mechanisms; High quantum efficiency EUV photoresists; Acid amplifiers for use in EUV Lithography; Design and synthesis of photo-imageable hydrogels for cell growth; Molecular Organometallic Resists for EUV (MORE).

Presentation title: Early Metal-Containing Resists for EUV Lithography

Abstract:  Since 2009, the photoresist community has shown a great deal of interest in EUV photoresists containing metallic elements.  This interest was initiated by two events:  (1) Publication of the pioneering work of OSU and Cornell; (2) The realization that increasing the EUV optical density of resists will improve stochastics. This presentation will review the several EUV resist platforms containing metals. In particular, the work of Inpria, Cornell, UAlbany will be described.

Tutorial speaker:  Toru Umeda (Nihon Pall Ltd.)

Biography: Mr. Toru Umeda is a Senior Principal Scientist at Scientific Laboratory Services division in Nihon Pall Ltd. He serves assessing the performance of filtration products aligned with the requirement in the lithography application to date as well as to technically interpret the feedback from the users into R&D.  The outcomes of filtration studies are often published as technical papers to provide updated findings.  More than 30 technical papers on the lithography filtration are published as first author.

Presentation title:  Resist filtering technology

Abstract: 半導体デバイスにおける、回路線幅の継続的な微細化に伴い、許容されるレジストパターン欠陥のサイズも微細化される。レジスト材料メーカー及びレジスト製造メーカーでは充填用フィルター、デバイスメーカーではポイントオブユースフィルターによるろ過が行われている。ろ過による低減が効果的であることがわかっている欠陥として、マイクロブリッジ欠陥がある。より微細なパターンにおける効果的なマイクロブリッジ除去がレジストろ過における大きな課題となっている。本講演では、EUVリソグラフィ用のレジスト材料に対するろ過について述べる。

Tutorial speaker:  Tomohide Katayama (Merck)

Biography: Mr. Tomohide Katayama is a seasoned expert in lithography materials and semiconductor processes, with over 30 years of experience. He began his career at Toshiba (1994–2000) as a lithography process engineer, followed by a role at Nichia Chemical (2000–2001) leading R&D for laser diode mask development. Since 2001, he has held various leadership roles at Merck, including Patterning R&D Manager and Global Application Director. He currently heads Merck Patterning R&D Japan, focusing on advanced materials such as BARC, SOC, TC, MHM, rinse, and shrink materials. Mr. Katayama has played a key role in driving innovation in patterning technology.

Presentation title: Basics of BARC, SOC, TC, MHM, rinse, shrink material

Abstract: This tutorial will cover the key concepts, design principles, and processing techniques for a range of advanced materials used in lithography. Topics include Bottom Anti-Reflective Coatings (BARC), Spin-on Carbon (SOC), Top Coatings (TC), Metal Hard Masks (MHM), as well as materials for rinse and shrink processes. We will explore their roles in enhancing patterning performance and their integration into cutting-edge lithographic workflows. 

Tutorial special keynote speaker: Hayato Iwamoto (Sony Semiconductor Solutions Corporation)

Keynote speaker biography: Mr. Hayato Iwamoto received his BS and MS degrees in Meiji University, Japan,  in 1990 and 1992, respectively. He joined Sony Corporation in 1992 and was engaged in the development of process and integration technologies for various semiconductor devices. Currently, he is a senior general manager of research division at Sony Semiconductor Solutions Corporation, where he supervises the device, process, material, integration and packaging technologies for advanced image sensors and displays with a wide range of expertise from research to mass production.

Presentation title: Process technology for evolving 3D stacked CMOS image sensors

Abstract: スマートフォンなどに搭載されているイメージセンサは、スマートフォンをはじめとする多くの電子機器に搭載され、さまざまなアプリケーションで利用されている。  ソニーは2008年に世界初の裏面照射型CMOSイメージセンサの量産を開始し、その後、積層型およびCu-Cu接続型の3D積層技術を導入することで特性を向上させてきた。本講演ではこれらの技術進化と将来展開について講演する。

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